? 2008 ixys corporation, all rights reserved genx3 tm 600v igbt symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 64 a i cm t c = 25c, 1ms 400 a ssoa v ge = 15v, t vj = 125c, r g = 3 i cm = 200 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 5 g ds99971(04/08) ixgh64n60b3 IXGT64N60B3 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 50 a v ge = 0v t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 1.59 1.80 v v ces = 600v i c110 = 64a v ce(sat) 1.8v preliminary technical information to-247 (ixgh) g c e c (tab) to-268 (ixgt) g e c (tab) medium speed low vsat pt igbts for 5 - 40khz switching t fi(typ) = 88ns features z optimized for low conduction and switching losses z square rbsoa z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions and dimensions. ixgh64n60b3 IXGT64N60B3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 38 64 s c ies 4750 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 260 pf c res 65 pf q g 168 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 28 nc q gc 61 nc t d(on) 25 ns t ri 41 ns e on 1.5 mj t d(off) 138 ns t fi 88 150 ns e off 1.0 1.9 mj t d(on) 24 ns t ri 40 ns e on 2.70 mj t d(off) 195 ns t fi 131 ns e off 1.95 mj r thjc 0.27 c/w r thcs 0.15 c/w note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 480v, r g = 3 inductive load, t j = 125c i c = 50a, v ge = 15v v ce = 480v, r g = 3 to-268 (ixgt) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain
? 2008 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ce - volts i c - amperes v ge = 15v 11v 9v 5v 7v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 0123456 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ce - volts i c - amperes v ge = 15v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 25a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 100a 50a 25a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc ixgh64n60b3 IXGT64N60B3
ixys reserves the right to change limits, test conditions and dimensions. ixgh64n60b3 IXGT64N60B3 ixys ref: g_64n60b3(75) 4-09-08-a fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 3 dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 300v i c = 50a i g = 10 ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance -1 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 42a i c = 84a i c = 21a fig. 15. inductive turn-off switching times vs. gate resistance 100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 30 35 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 900 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 21a, 42a, 84a i c = 21a i c = 42a fig. 14. inductive switching energy loss vs. collector current -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 20 25 30 35 40 45 50 55 60 65 70 75 80 85 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 e on - millijoules e off e on - - - - r g = 3 , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 13. inductive switching energy loss vs. junction temperature -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 e on - millijoules e off e on - - - - r g = 3 , v ge = 15v v ce = 480v i c = 42a i c = 84a i c = 21a fig. 17. inductive turn-off switching times vs. collector current 70 80 90 100 110 120 130 140 150 160 170 180 20 25 30 35 40 45 50 55 60 65 70 75 80 85 i c - amperes t f - nanoseconds 100 110 120 130 140 150 160 170 180 190 200 210 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 16. inductive turn-off switching times vs. junction temperature 60 70 80 90 100 110 120 130 140 150 160 170 180 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 115 130 145 160 175 190 205 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 , v ge = 15v v ce = 480v i c = 42a, 84a i c = 21a ixgh64n60b3 IXGT64N60B3
ixys reserves the right to change limits, test conditions and dimensions. ixgh64n60b3 IXGT64N60B3 ixys ref: g_64n60b3(75) 4-09-08-a fig. 18. inductive turn-on switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 110 120 130 0 5 10 15 20 25 30 35 r g - ohms t r - nanoseconds 20 25 30 35 40 45 50 55 60 65 70 75 80 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 84a i c = 42a i c = 21a fig. 20. inductive turn-on switching times vs. collector current 15 20 25 30 35 40 45 50 55 60 65 70 75 20 25 30 35 40 45 50 55 60 65 70 75 80 85 i c - amperes t r - nanoseconds 20 21 22 23 24 25 26 27 28 29 30 31 32 t d(on) - nanoseconds t r t d(on ) - - - - r g = 3 , v ge = 15v v ce = 480v 25oc < tj < 125oc fig. 19. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 21 22 23 24 25 26 27 28 29 30 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 v ge = 15v v ce = 480v i c = 21a i c = 42a i c = 84a
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